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Philips Semiconductors
Product specification
Triacs sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
BT138B series E
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT138BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 12 95 600E 600 12 95 800E 800 12 95 V A A
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 99 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 12 95 105 45 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BT138B series E
TYP. 55
MAX. 1.5 2.0 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.4 0.7 0.4 0.1 MAX. 10 10 10 25 30 40 30 40 30 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. TYP. 50 2 MAX. UNIT V/s s
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
BT138B series E
20
Ptot / W
BT138
Tmb(max) / C 95 = 180
15
IT(RMS) / A
BT138
15
1
120 90 60
99 C
102.5
10
110
10
30
5
5 117.5
0
0
5 IT(RMS) / A
10
125 15
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.
BT138
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
1000
ITSM / A
25
IT(RMS) / A
BT138
20
15
100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time
10
5
Tj initial = 25 C max 100us 1ms T/s 10ms 100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.
ITSM / A BT138 IT 80 T ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 99C.
VGT(Tj) VGT(25 C)
100
1.6 1.4 1.2 1
BT136
Tj initial = 25 C max 60
40
0.8
20
0.6 0.4 -50
0
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.
October 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
BT138B series E
3 2.5 2 1.5 1
IGT(Tj) IGT(25 C)
BT138E T2+ G+ T2+ GT2- GT2- G+
40
IT / A Tj = 125 C Tj = 25 C
BT138 typ max
30
Vo = 1.175 V Rs = 0.0316 Ohms
20
10
0.5 0 -50
0 0 0.5 1 1.5 VT / V 2 2.5 3
0
50 Tj / C
100
150
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3 2.5 2 1.5 1
TRIAC
10
Zth j-mb (K/W)
BT138
1
unidirectional bidirectional
0.1
P D tp
0.01
0.5 0 -50
0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s
t
0
50 Tj / C
100
150
10s
Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVD/dt (V/us)
3 2.5 2 1.5 1 0.5
TRIAC
1000
100
10
0 -50
0
50 Tj / C
100
150
1
0
50 Tj / C
100
150
Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.
Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
October 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max 4.5 max 1.4 max
BT138B series E
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
Notes 1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes 1. Plastic meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BT138B series E
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1997
6
Rev 1.200

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